HOME > Presentation > Detail
Realization of hole gas accumulation of p-Si/i-Ge core-shell nanowires by controlling boron doping concentration
The 65th JSAP Sping Meeting, 2018. 2018.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-04-04 22:37:39 +0900Updated at: 2018-06-05 14:19:33 +0900