HOME > Presentation > DetailSi/GeおよびGe/Siコアシェルナノワイヤへの選択ドーピングと応力評価(Characterization of selective doping and stress in Si/Ge and Ge/Si core-shell nanowires)深田 直樹, 三留 正則, 関口 隆史, 板東 義雄, Melanie Kirkham, Jung-il Hong, Zhong Lin Wang, Robert Snyder. TNT Japan. 2014.NIMS author(s)FUKATA, NaokiMITOME, MasanoriBANDO, YoshioFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:05:21 +0900Updated at: 2017-07-10 21:49:58 +0900