Au-Ge eutectic droplet formation on the initial stage of selective-area VLS growth of Ge nanowires on Si (111)

山口修弥, 湯澤秀真, JEVASUWAN, Wipakorn, FUKATA, Naoki, HARA, Shinjiro.

The 10th International Symposium on Control of Semiconductor Interface, International Conference on Silicon Epitaxy, and International SiGe Technology and Device Meeting (ISCSI-X & ICSI/ISTDM 2025). November 10, 2025-November 13, 2025.

NIMS author(s)

JEVASUWAN, Wipakorn
FUKATA, Naoki
HARA, Shinjiro

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Au-Ge eutectic droplet formation on the initial stage of selective-area VLS growth of Ge nanowires on Si (111)

Created at: 2025-11-13 03:12:33 +0900 Updated at: 2025-11-13 03:12:33 +0900