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p-GaAs(110)表面からのトンネル電子誘起発光近接場計測
(Light Emission Induced by Tunneling Electrons from p-type GaAs(110) Surfaces Observed at Near-field)
日本物理学会第59回年次大会. March 27, 2004-March 30, 2004.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:43:10 +0900 Updated at: 2017-07-10 18:57:36 +0900