HOME > Presentation > DetailEvaluation of Proton-induced Deep Levels in Si(陽子線照射によるn-si中の深い準位の評価)KONO, Kenichiro, 岸本直樹, AMEKURA, Hiroshi, 斎藤鉄哉, 岸本直樹, 斎藤鉄哉. Materials Research Society 1996 Fall Meeting. December 02, 1996-December 06, 1996.NIMS author(s)KONO, KenichiroAMEKURA, HiroshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-18 01:11:07 +0900 Updated at: 2017-07-10 17:39:38 +0900