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SiCステップ表面上のSi熱脱離グラフェン成長の第一原理シミュレーション
(First-principles simulations for graphene growth induced by Si sublimation from stepped SiC surface)
第７５回応用物理学会秋季学術講演会. 2014.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 04:04:37 +0900Updated at: 2017-07-10 22:03:55 +0900