Effect of a Dopant for Migration Energies of (0001) oriented 5-7 edge dislocation in GaN
The 8th Asian Conference on Crystal Growth and Crystal Technology (CGCT-8) . 2021.
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Materials Data Repository (MDR)上の本文・データセット
作成時刻: 2021-12-03 03:39:11 +0900更新時刻: 2021-12-03 03:39:11 +0900