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陽子線照射によるn-si中の深い準位の評価
(Evaluation of Proton-Induced Deep Levels in n-Si)
応用物理学会学術講演会 第57回. September 07, 1996-September 10, 1996.
NIMS author(s)
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Created at: 2017-02-18 01:08:46 +0900 Updated at: 2017-07-10 17:38:23 +0900