HOME > Presentation > DetailGrowth of GaAs Epitaxial Microcrystals on an S-Terminated GaAs Suhstrate in MBE.(MBE中でS終端処理を施したGaAs表面上での液滴エピタキシィ法によるGaAsエピタキシャル微結晶の成長.)KOGUCHI, Nobuyuki, ONISHI, Keiko, 高橋聡, 高橋聡. 第12回混晶韓個枡玄杓累灼角. July 14, 1993-July 16, 1993.NIMS author(s)ONISHI, KeikoFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-18 00:42:54 +0900 Updated at: 2017-07-10 17:24:33 +0900