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ドライ酸化とウェット酸化で成長させた(0001)4H-SiC MOSFETの電流検出型電子共鳴分光を用いた酸化膜の比較
(Comparison between dry and wet oxide on (0001(_))4H-SiC MOSFETs studied by electrically detected magnetic resonance)
応用物理学会秋季学術講演会. 2016.
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Created at: 2017-01-08 03:17:23 +0900Updated at: 2017-07-10 22:26:44 +0900