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SeδドープGaAsの電子構造Ⅱ－Ga空孔の効果
(Electronic Structure of Se ζ-doping GaAs-Effect of Ga Vacancy)
日本物理学会 1996年秋の分科会. October 01, 1996-October 04, 1996.
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Created at: 2017-01-08 04:38:39 +0900 Updated at: 2018-05-21 18:11:20 +0900