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n-AlGaAs/GaAs/AlGaAsダブルヘテロ電界効果トランジスタのゲート端局所照射におけるショットキー光電流の温度依存性
(Temperature Dependence of Schottky Photocurrent for Local Gate Edge Illumination in n-AlGaAs/GaAs/AlGaAs Double-Heterojunction Field-Effect Transistor)
ACSIN-14. October 21, 2018-October 25, 2018.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2018-09-02 16:19:52 +0900Updated at: 2018-09-02 16:19:52 +0900