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InGaAs Quantum Wires on {111}B-Faceted V-Grooves of InP formed by In-Situ Gas Etching and MOCVD Regrowth
(ガスエッチングとMOCVD再成長を用いてInP上{111}BファセットV溝に形成したInGaAs量子細線)
2nd Int'l Workshop on Nano-scale Spectroscopy and Nanotechnology. November 25, 2002-November 29, 2002.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-18 02:56:42 +0900 Updated at: 2017-07-10 18:33:52 +0900