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SiO2/Si(100)における電子線刺激脱離現象及びそのAES深さ分布への影響.
(Electron Desorption on SiO2/Si(100) and its Influence on AES Depth Profile.)
日本表面科学会. November 30, 1993-December 02, 1993.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:38:18 +0900 Updated at: 2017-07-10 17:26:36 +0900