HOME > Presentation > Detail
Hfを基礎としたHigh-kゲート絶縁膜中の酸素空孔の形成を促進する窒素添加の悪影響
(An Unfavorable Effect of Nitrogen Incorporation on Accelerating Oxygen Vacancy Formation in Hf-based High-k Gate Dielectrics)
ゲートスタック研究会. February 02, 2006-February 04, 2006.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:30:38 +0900 Updated at: 2017-07-10 19:33:06 +0900