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超低速蒸着法を用いて形成したクォテリレン薄膜の成長とそのトランジスタ特性
(Growth and Transistor Property of Quaterrylene Thin Film on SiO2 Surface Using Ultra-Low Flux Rate System)
ACSIN-9. 2007.
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 10:56:32 +0900Updated at: 2017-07-10 20:04:44 +0900