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AlとOを用いた抵抗変化型メモリ素子
(Ubiqutous Resistive Random Access Memory device composed of Al and O elements)
IUMRS-ICEM2012. 2012.
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Created at: 2017-02-14 11:21:25 +0900Updated at: 2017-07-10 21:28:46 +0900