HOME > Presentation > Detail
AlとOを用いた抵抗変化型メモリ素子
(Ubiqutous Resistive Random Access Memory device composed of Al and O elements)
IUMRS-ICEM2012. September 23, 2012-September 28, 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:21:25 +0900 Updated at: 2017-07-10 21:28:46 +0900