HOME > Presentation > Detail3C-SiC(1-10)及び 4H-SiC(11-20)表面における電子状態とその安定性 (3C-SiC(1-10) and 4H-SiC(11-20) surface electronic states and their stability)小山 洋, 奈良 純, 大野 隆央. 日本応用物理学会秋期学術講演会. 2013.NIMS author(s)NARA, JunFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 10:59:19 +0900Updated at: 2017-07-10 21:41:42 +0900