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Ta2O5 capを用いた界面スカベンジング技術によるHigh-k/Si直接接合の形成
(Direct contact formation of High-k layer to Si by Interfacial Layer Scavenging Technique with Ta2O5 Cap)
the 8th International Nanotechnology Conference (INC8). May 08, 2012-May 11, 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 05:38:10 +0900Updated at: 2017-07-10 21:34:26 +0900