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局所光照射によるn-AlGaAs/GaAsヘテロ接合電界効果トランジスタのショットキー光電流増強効果
(Enhancement of infrared photo-responses of the Schottky gate region of an n-AlGaAs/GaAs heterojunction field effect transistor by a second light illumination)
第66回応用物理学会春季学術講演会. March 09, 2019-March 12, 2019.
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Created at: 2019-12-25 03:00:24 +0900 Updated at: 2019-12-25 03:00:24 +0900