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Ta2O5キャップによる界面層スカベンジングを用いたHfO2/Si直接接合の形成
(Direct contact formation of HfO2 on Si Substrate by Interfacial Layer Scavenging Technique with Ta2O5 Cap)
The 6th JSPS Silicon Symposium. November 19, 2012-November 23, 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-14 11:02:42 +0900 Updated at: 2017-07-10 21:34:27 +0900