HOME > Presentation > Detail分子線エピタキシー法によりMgO(100)基板上に作製したScN薄膜における電気特性の成長条件依存性(Growth condition dependence of electric properties of ScN films on (100) MgO substrates prepared by molecular beam epitaxy)大垣 武, 渡邉 賢, 安達 裕, 坂口 勲, 菱田 俊一, 大橋 直樹, 羽田 肇. 17th International Conference on Crystal Growth and Epitaxy. August 11, 2013-August 16, 2013.NIMS author(s)OGAKI, TakeshiADACHI, YutakaSAKAGUCHI, IsaoOHASHI, NaokiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-01-08 04:33:22 +0900 Updated at: 2017-07-10 21:37:15 +0900