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ALD-ZrO2核生成層を用いた強誘電体HfxZr1−xO2薄膜の形成技術と そのMFS構造への応用
(Fabrication technique of ferroelectric HfxZr1−xO2 thin films using ALD-ZrO2 nucleation layers and its application to MFS structures)
2024年 第71回応用物理学会春季学術講演会. March 22, 2024-March 25, 2024. Invited
NIMS author(s)
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Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2024-05-21 03:12:36 +0900 Updated at: 2024-05-21 03:12:36 +0900