HOME > Presentation > DetailMoSe2/GaAsヘテロエピタキシーにおける基板面方位依存性(Effect of Substrate Orientation on MoSe2/GaAs heteroepitaxy)大竹 晃浩, 佐久間 芳樹. 2019年第80回応用物理学会秋季学術講演会. 2019.NIMS author(s)OHTAKE, AkihiroSAKUMA, YoshikiFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2020-02-29 03:20:32 +0900 Updated at :2020-02-29 03:20:32 +0900