HOME > Presentation > DetailDroplet epitaxial growth of highly symmetric InAs quantum dots on InAlGaAs/InP(111)A emitting at telecom 1.55 micron-m wavelengthハ ヌル, 間野 高明, 佐久間 芳樹, 迫田 和彰, 黒田 隆. The 9th Int Conf on Quantum Dots (QD2016). 2016.NIMS author(s)MANO, TakaakiSAKUMA, YoshikiSAKODA, KazuakiKURODA, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:44:58 +0900Updated at: 2017-07-10 22:29:35 +0900