HOME > Presentation > DetailDroplet epitaxial growth of highly symmetric InAs quantum dots on InAlGaAs/InP(111)A emitting at telecom 1.55 micron-m wavelengthハ ヌル, 間野 高明, 佐久間 芳樹, 迫田 和彰, 黒田 隆. The 9th Int Conf on Quantum Dots (QD2016). May 22, 2016-May 27, 2016.NIMS author(s)MANO, TakaakiSAKUMA, YoshikiSAKODA, KazuakiKURODA, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2017-02-14 11:44:58 +0900 Updated at: 2017-07-10 22:29:35 +0900