HOME > Presentation > Detail
第一原理分子動力学を用いた傾斜SiC(0001)表面上グラフェンの成長過程解析
(First-Principles Molecular Dynamics Simulations for Graphene Growth Process on Stepped SiC(0001) Surface )
CCP2012. October 14, 2012-October 18, 2012.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-01-08 03:22:53 +0900 Updated at: 2017-07-10 21:29:18 +0900