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抵抗変化メモリの導電性パス生成機構 ~Grain surface tiling modelの検証~
(Formation Mechanism of Conducting Path in Resistive Random Access Memory ~ Verification of a grain surface tiling model ~)
第64回応用物理学会春季学術講演会. 2017.
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-04-18 22:55:20 +0900Updated at: 2018-06-05 14:07:29 +0900