HOME > Presentation > DetailElectron-beam-induced current study of dislocations at the interface of strained Si/Si0.8Ge0.2袁 暁利, 陳 君, 関口 隆史, 李成奇, 伊藤俊. EDS2006. 2006.NIMS author(s)CHEN, JunFulltext and dataset(s) on Materials Data Repository (MDR)Created at :2017-02-14 11:01:26 +0900 Updated at :2017-07-10 19:41:50 +0900