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Electron-beam-induced current study of dislocations at the interface of strained Si/Si0.8Ge0.2

袁 暁利, 陳 君, 関口 隆史, 李成奇, 伊藤俊.
EDS2006. 2006.

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    Created at :2017-02-14 11:01:26 +0900 Updated at :2017-07-10 19:41:50 +0900

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