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ワイドギャップAlN／ダイヤモンドヘテロ接合を用いた電界効果トランジスタ
(Heterojunction Field-Effect Transistors with Widegap AlN and Diamond Semiconductors)
EMN Meeting on Field-Effect Transistors 2016. March 14, 2016-March 18, 2016. Invited
NIMS author(s)
Fulltext and dataset(s) on Materials Data Repository (MDR)
Created at: 2017-02-20 05:28:15 +0900 Updated at: 2024-03-05 11:46:11 +0900