Poly-Si/TiN/HfO2/SiO2ゲートスタックのTiNからの窒素起因の窒化反応と酸化反応

Poly-Si/TiN/HfO2/SiO2ゲートスタックのTiNからの窒素起因の窒化反応と酸化反応
(Oxidizing and Nitriding Reactions Originated with Nitrogen Released from TiN in Poly-Si/TiN/HfO2/SiO2 Gate Stack)

Takeo Matsuki, Kenji Ohmori, Testuo Morooka, Takayuki Suzuki, Motoyuki Sato, 木本浩司, 生田目俊秀, Seiichi Miyazaki, Kenji Shirai, 知京豊裕, Keisaku Yamada, Jiro Yugami, 松井良夫, Kazuto Ikeda, Yuzuru Ohji.

40th IEEE Semiconductor Interface Specialists Conference . December 03, 2009-December 05, 2009.

NIMS author(s)

KIMOTO, Koji
NABATAME, Toshihide
CHIKYO, Toyohiro
MATSUI, Yoshio

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2017-02-14 10:54:01 +0900Updated at: 2017-07-10 20:35:18 +0900

Poly-Si/TiN/HfO2/SiO2ゲートスタックのTiNからの窒素起因の窒化反応と酸化反応(Oxidizing and Nitriding Reactions Originated with Nitrogen Released from TiN in Poly-Si/TiN/HfO2/SiO2 Gate Stack)

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Poly-Si/TiN/HfO2/SiO2ゲートスタックのTiNからの窒素起因の窒化反応と酸化反応
(Oxidizing and Nitriding Reactions Originated with Nitrogen Released from TiN in Poly-Si/TiN/HfO2/SiO2 Gate Stack)