HOME > Misc > Detail(Invited) Fabrication Technique of Ferroelectric HfxZr1−XO2 Thin Films Using ALD-ZrO2 Nucleation LayersTakashi Onaya. ECS Transactions 112 [1] 75-88. 2023.https://doi.org/10.1149/11201.0075ecst NIMS author(s)ONAYA, TakashiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2026-06-18 03:05:51 +0900 Updated at: 2026-10-22 04:34:50 +0900