Erratum: “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states” [Appl. Phys. Lett. 106, 152104 (2015)] | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Erratum: “Gate-modulated conductance of few-layer WSe2 field-effect transistors in the subgap regime: Schottky barrier transistor and subgap impurity states” [Appl. Phys. Lett. 106, 152104 (2015)]

Junjie Wang, Daniel Rhodes, Simin Feng, Minh An T. Nguyen, K. Watanabe, T. Taniguchi, Thomas E. Mallouk, Mauricio Terrones, Luis Balicas, J. Zhu.

Applied Physics Letters 069901. 2016.

https://doi.org/10.1063/1.4941993

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作成時刻: 2022-02-25 20:49:31 +0900 更新時刻: 2026-10-29 05:21:59 +0900

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