Strong interfacial charge transfer from CrSBr induces extreme hole doping and quantum‐Hall states in graphene heterostructures | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Strong interfacial charge transfer from CrSBr induces extreme hole doping and quantum‐Hall states in graphene heterostructures

Ziqi Liu, Yuchen Gao, Chengfeng Zhu, Yichang Sun, Kenji Watanabe, Takashi Taniguchi, Zuxin Chen, Pingfan Gu, Yu Ye.

InfoScience 3 [1] e70007. 2026.

https://doi.org/10.1002/inc2.70007

Open Access Wiley (Publisher)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2026-04-08 03:06:16 +0900 更新時刻: 2026-10-14 04:31:00 +0900

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