抵抗変化メモリ(ReRAM)における導電性パス生成機構の検討 〜第一原理分子動力学法を用いたNiOの様々な面方位の表面状態解析〜
(Study on Formative Mechanism of Conductive Path in Resistive Random Access Memory (ReRAM) －Analyses of Various NiO Surface States Using Ab Initio Calculations－)
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Created at: 2022-10-22 02:18:40 +0900Updated at: 2022-10-22 02:18:40 +0900