Enhanced Performance of WS
2
Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts (Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts)
Nhat Anh Nguyen Phan, Hamin Noh, Jihoon Kim, Yewon Kim, Hanul Kim, Dongmok Whang, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil‐Ho Kim.