Enhanced Performance of WS 2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts
(Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts)

著者	Nhat Anh Nguyen Phan, Hamin Noh, Jihoon Kim, Yewon Kim, Hanul Kim, Dongmok Whang, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil‐Ho Kim.
掲載誌名	Small 18 [13] 2105753 ISSN: 16136810 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	Wiley
発表年	2022
言語	English
DOI	https://doi.org/10.1002/smll.202105753
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Enhanced Performance of WS 2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts(Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts)