SAMURAI - NIMS Researchers Database

HOME > 論文 > 書誌詳細

Enhanced Performance of WS 2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts
(Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts)

Nhat Anh Nguyen Phan, Hamin Noh, Jihoon Kim, Yewon Kim, Hanul Kim, Dongmok Whang, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil‐Ho Kim.
Small 18 [13] 2105753. 2022.

NIMS著者


Materials Data Repository (MDR)上の本文・データセット


    作成時刻: 2022-04-19 03:25:06 +0900更新時刻: 2024-03-31 16:32:27 +0900

    ▲ページトップへ移動