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Enhanced Performance of WS 2 Field‐Effect Transistor through Mono and Bilayer h‐BN Tunneling Contacts
(Enhanced Performance of WS2 Field-Effect Transistor through Mono and Bilayer h-BN Tunneling Contacts)

Nhat Anh Nguyen Phan, Hamin Noh, Jihoon Kim, Yewon Kim, Hanul Kim, Dongmok Whang, Nobuyuki Aoki, Kenji Watanabe, Takashi Taniguchi, Gil‐Ho Kim.
Small 18 [13] 2105753. 2022.

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    作成時刻 :2022-04-19 03:25:06 +0900 更新時刻 :2022-04-20 03:25:53 +0900

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