HOME > 論文 > 書誌詳細Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory(Material & device structure designs for 2D memory device based on the floating-gate voltage trajectory)Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio. ACS Nano 15 [4] 6658-6668. 2021.https://doi.org/10.1021/acsnano.0c10005 NIMS著者谷口 尚渡邊 賢司Materials Data Repository (MDR)上の本文・データセット作成時刻: 2021-05-01 03:00:29 +0900更新時刻: 2024-04-02 04:48:43 +0900