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Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory
(Material & device structure designs for 2D memory device based on the floating-gate voltage trajectory)

Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio.
ACS Nano 15 [4] 6658-6668. 2021.

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Materials Data Repository (MDR)上の本文・データセット


    作成時刻: 2021-05-01 03:00:29 +0900更新時刻: 2024-04-02 04:48:43 +0900

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