Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory
(Material & device structure designs for 2D memory device based on the floating-gate voltage trajectory)

著者	Taro Sasaki, Keiji Ueno, Takashi Taniguchi, Kenji Watanabe, Tomonori Nishimura, Kosuke Nagashio.
掲載誌名	ACS Nano 15 [4] 6658-6668 ISSN: 1936086X, 19360851 ESIでのカテゴリ: MATERIALS SCIENCE
出版社	American Chemical Society (ACS)
発表年	2021
言語	English
DOI	https://doi.org/10.1021/acsnano.0c10005
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Material and Device Structure Designs for 2D Memory Devices Based on the Floating Gate Voltage Trajectory(Material &amp; device structure designs for 2D memory device based on the floating-gate voltage trajectory)