Gate-Tunable Negative Differential Resistance in WSe<sub>2</sub>/h-BN/Graphene Heterostructure

Inayat Uddin; Nhat Anh Nguyen Phan; Hai Yen Le Thi; Won Jong Yoo; Kenji Watanabe; Takashi Taniguchi; Muhammad Atif Khan; Gil-Ho Kim; Inayat Uddin; Nhat Anh Nguyen Phan; Hai Yen Le Thi; Won Jong Yoo; Muhammad Atif Khan; Gil-Ho Kim; Inayat Uddin; Nhat Anh Nguyen Phan; Hai Yen Le Thi; Won Jong Yoo; Kenji Watanabe; Takashi Taniguchi; Muhammad Atif Khan; Gil-Ho Kim; Inayat Uddin; Nhat Anh Nguyen Phan; Hai Yen Le Thi; Won Jong Yoo; Muhammad Atif Khan; Gil-Ho Kim

doi:10.1021/acsanm.4c05907

Gate-Tunable Negative Differential Resistance in WSe₂/h-BN/Graphene Heterostructure

Inayat Uddin, Nhat Anh Nguyen Phan, Hai Yen Le Thi, Won Jong Yoo, Kenji Watanabe, Takashi Taniguchi, Muhammad Atif Khan, Gil-Ho Kim, Inayat Uddin, Nhat Anh Nguyen Phan, Hai Yen Le Thi, Won Jong Yoo, Muhammad Atif Khan, Gil-Ho Kim.

ACS Applied Nano Materials 8 [1] 535-542. 2025.

https://doi.org/10.1021/acsanm.4c05907

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2025-02-23 03:09:48 +0900 Updated at: 2026-10-12 04:34:37 +0900

Gate-Tunable Negative Differential Resistance in WSe2/h-BN/Graphene Heterostructure

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

Gate-Tunable Negative Differential Resistance in WSe₂/h-BN/Graphene Heterostructure