Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping
(Conversion of charge carrier polarity in MoTe2 field effect transistor)

Hanul Kim, Inayat Uddin, Kenji Watanabe, Takashi Taniguchi, Dongmok Whang, Gil-Ho Kim.

Nanomaterials 13 [10] 1700. 2023.

https://doi.org/10.3390/nano13101700

Open Access MDPI AG (Publisher) Materials Data Repository (MDR)

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Conversion of Charge Carrier Polarity in MoTe2 Field Effect Transistor via Laser Doping

作成時刻: 2023-06-07 00:45:14 +0900 更新時刻: 2026-09-29 09:26:49 +0900

▲ページトップへ移動