HOME > 論文 > 書誌詳細Role of hexagonal boron nitride configuration in gate-induced hysteresis of WSe2 field-effect transistorsSeong-Yeon Lee, Sung-Ha Kim, Kenji Watanabe, Takashi Taniguchi, Ki-Ju Yee. Current Applied Physics 65 41-46. 2024.https://doi.org/10.1016/j.cap.2024.06.003 NIMS著者渡邊 賢司谷口 尚Materials Data Repository (MDR)上の本文・データセット作成時刻: 2025-02-23 03:09:11 +0900 更新時刻: 2025-06-28 04:35:14 +0900
