Accurate Assessments of the Electronic Structures of Ultrathin PtSe<sub>2</sub>: Bandgap Quantification and Critical Thickness for the Metal–Semiconductor Transition

Hansung Kim; Janghwan Cha; Jong Hyeok Seo; Beopgil Cho; Jaemun Park; Keeseong Park; Kenji Watanabe; Takashi Taniguchi; Dong Han Ha; Jihwan Kwon; Sunae Seo; Yong-Sung Kim; Suyong Jung; Hansung Kim; Janghwan Cha; Jong Hyeok Seo; Beopgil Cho; Jaemun Park; Keeseong Park; Kenji Watanabe; Takashi Taniguchi; Dong Han Ha; Jihwan Kwon; Sunae Seo; Yong-Sung Kim; Suyong Jung

doi:10.1021/acsami.5c08999

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Accurate Assessments of the Electronic Structures of Ultrathin PtSe₂: Bandgap Quantification and Critical Thickness for the Metal–Semiconductor Transition

Hansung Kim, Janghwan Cha, Jong Hyeok Seo, Beopgil Cho, Jaemun Park, Keeseong Park, Kenji Watanabe, Takashi Taniguchi, Dong Han Ha, Jihwan Kwon, Sunae Seo, Yong-Sung Kim, Suyong Jung.

ACS Applied Materials & Interfaces 17 [34] 48621-48630. 2025.

https://doi.org/10.1021/acsami.5c08999

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2025-09-09 03:11:22 +0900 更新時刻: 2026-09-21 04:30:24 +0900

Accurate Assessments of the Electronic Structures of Ultrathin PtSe2: Bandgap Quantification and Critical Thickness for the Metal–Semiconductor Transition

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

Accurate Assessments of the Electronic Structures of Ultrathin PtSe₂: Bandgap Quantification and Critical Thickness for the Metal–Semiconductor Transition