Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning
(Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi Level Pinning)

Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Kazuhito Tsukagoshi.

ACS Applied Materials & Interfaces 8 [23] 14732-14739. 2016.

https://doi.org/10.1021/acsami.6b02036

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2016-07-21 21:48:31 +0900更新時刻: 2024-04-02 06:36:26 +0900

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