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Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi-Level Pinning
(Carrier Polarity Control in α-MoTe2 Schottky Junctions Based on Weak Fermi Level Pinning)

Shu Nakaharai, Mahito Yamamoto, Keiji Ueno, Kazuhito Tsukagoshi.
ACS Applied Materials & Interfaces 8 [23] 14732-14739. 2016.
https://doi.org/10.1021/acsami.6b02036

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    作成時刻: 2016-07-21 21:48:31 +0900 更新時刻: 2026-10-08 08:09:17 +0900

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