Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

HOME > 論文 > 書誌詳細

Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction
((010) beta-Ga2O3基板上にコヒレント成長したbeta-(AlxGa1-x)2O3薄膜の高分解能XRDによる組成決定)

Yuichi Oshima, Elaheh Ahmadi, Stefan C. Badescu, Feng Wu, James S. Speck.

Applied Physics Express 9 [6] 061102. 2016.

https://doi.org/10.7567/apex.9.061102

Open Access Materials Data Repository (MDR)

NIMS著者

大島祐一

Materials Data Repository (MDR)上の本文・データセット

MDRavailable Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

作成時刻: 2016-05-27 22:14:24 +0900更新時刻: 2024-03-29 22:23:25 +0900

▲ページトップへ移動