Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction | SAMURAI, NIMS Researchers Directory Service

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Composition determination of β-(AlxGa1−x)2O3layers coherently grown on (010) β-Ga2O3substrates by high-resolution X-ray diffraction
((010) beta-Ga2O3基板上にコヒレント成長したbeta-(AlxGa1-x)2O3薄膜の高分解能XRDによる組成決定)

Yuichi Oshima, Elaheh Ahmadi, Stefan C. Badescu, Feng Wu, James S. Speck.

Applied Physics Express 9 [6] 061102. 2016.

https://doi.org/10.7567/apex.9.061102

Open Access Materials Data Repository (MDR)

NIMS author(s)

OSHIMA, Yuichi

Fulltext and dataset(s) on Materials Data Repository (MDR)

MDRavailable Composition determination of beta-(AlxGa1-x)2O3 layers coherently grown on (010) beta-Ga2O3 substrates by high-resolution x-ray diffraction

Created at: 2016-05-27 22:14:24 +0900Updated at: 2024-03-29 22:23:25 +0900

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