HOME > Article > DetailEpitaxial growth of GaN on (100) beta-Ga2O3 substrates by metalorganic vapor phase epitaxyKiyoshi Shimamura, Encarnación G. Víllora, Kay Domen, Keiichi Yui, Kazuo Aoki, Noboru Ichinose. Japanese Journal of Applied Physics 44 [1] L7-L8. 2005.https://doi.org/10.1143/jjap.44.l7 NIMS author(s)SHIMAMURA, KiyoshiFulltext and dataset(s) on Materials Data Repository (MDR)Created at: 2016-05-24 14:52:55 +0900 Updated at: 2026-11-04 05:43:54 +0900
