Trap Depth Engineering of SrSi2O2N2:Ln2+,Ln3+ (Ln2+ = Yb, Eu; Ln3+ = Dy, Ho, Er) Persistent Luminescence Materials for Information Storage Applications | 研究者総覧SAMURAI - 物質・材料研究機構 (NIMS)

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Trap Depth Engineering of SrSi2O2N2:Ln2+,Ln3+ (Ln2+ = Yb, Eu; Ln3+ = Dy, Ho, Er) Persistent Luminescence Materials for Information Storage Applications

Yixi Zhuang, Ying Lv, Le Wang, Wenwei Chen, Tian-Liang Zhou, Takashi Takeda, Naoto Hirosaki, Rong-Jun Xie.

ACS Applied Materials & Interfaces 10 [2] 1854-1864. 2018.

https://doi.org/10.1021/acsami.7b17271

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作成時刻: 2018-07-05 15:38:29 +0900更新時刻: 2024-04-01 21:48:48 +0900

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