HOME > 論文 > 書誌詳細Effect of Fe impurity on the dislocations in 4H-SiC: Insights from electrical and optical characterizationBin Chen, Takashi Sekiguchi, Hirofumi Matsuhata, Takasumi Ohyanagi, Akimasa Kinoshita, Hajime Okumura. Japanese Journal of Applied Physics 53 [5S1] 05FG01. 2014.https://doi.org/10.7567/jjap.53.05fg01 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 17:21:56 +0900 更新時刻: 2026-11-09 04:40:12 +0900
