No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO<sub>2</sub> Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

Reijiro Shimura; Takanori Mimura; Akinori Tateyama; Takahisa Shiraishi; Takao Shimizu; Tomoaki Yamada; Yoshitomo Tanaka; Yukari Inoue; Hiroshi Funakubo; Reijiro Shimura; Takanori Mimura; Akinori Tateyama; Takahisa Shiraishi; Takao Shimizu; Tomoaki Yamada; Yoshitomo Tanaka; Yukari Inoue; Hiroshi Funakubo

doi:10.1002/pssr.202100574

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No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO₂ Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo.

physica status solidi (RRL) – Rapid Research Letters 16 [10] . 2022.

https://doi.org/10.1002/pssr.202100574

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Materials Data Repository (MDR)上の本文・データセット

作成時刻: 2022-12-13 03:27:07 +0900更新時刻: 2025-03-11 08:43:47 +0900

No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

NIMS著者

Materials Data Repository (MDR)上の本文・データセット

No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO₂ Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method