No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO<sub>2</sub> Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

Reijiro Shimura; Takanori Mimura; Akinori Tateyama; Takahisa Shiraishi; Takao Shimizu; Tomoaki Yamada; Yoshitomo Tanaka; Yukari Inoue; Hiroshi Funakubo; Reijiro Shimura; Takanori Mimura; Akinori Tateyama; Takahisa Shiraishi; Takao Shimizu; Tomoaki Yamada; Yoshitomo Tanaka; Yukari Inoue; Hiroshi Funakubo

doi:10.1002/pssr.202100574

No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO₂ Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

Reijiro Shimura, Takanori Mimura, Akinori Tateyama, Takahisa Shiraishi, Takao Shimizu, Tomoaki Yamada, Yoshitomo Tanaka, Yukari Inoue, Hiroshi Funakubo.

physica status solidi (RRL) – Rapid Research Letters 16 [10] . 2022.

https://doi.org/10.1002/pssr.202100574

NIMS author(s)

SHIMIZU, Takao

Fulltext and dataset(s) on Materials Data Repository (MDR)

Created at: 2022-12-13 03:27:07 +0900Updated at: 2025-01-09 09:00:00 +0900

No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO2 Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method

NIMS author(s)

Fulltext and dataset(s) on Materials Data Repository (MDR)

No‐Heating Deposition of 1‐μm‐Thick Y‐Doped HfO₂ Ferroelectric Films with Good Ferroelectric and Piezoelectric Properties by Radio Frequency Magnetron Sputtering Method