HOME > 論文 > 書誌詳細Study of dislocations in strained-Si/ Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniquesX. L. Yuan, T. Sekiguchi, S. G. Ri, S. Ito. The European Physical Journal Applied Physics 27 [1-3] 337-340. 2004.https://doi.org/10.1051/epjap:2004119-7 NIMS著者Materials Data Repository (MDR)上の本文・データセット作成時刻: 2016-05-24 14:35:11 +0900 更新時刻: 2026-10-08 08:02:45 +0900
