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Study of dislocations in strained-Si/ Si0.8Ge0.2 heterostructures by EBIC, TEM and etching techniques

X. L. Yuan, T. Sekiguchi, S. G. Ri, S. Ito.
The European Physical Journal Applied Physics 27 [1-3] 337-340. 2004.
https://doi.org/10.1051/epjap:2004119-7

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